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For the Inventor, By the Inventor

Fremont, CA, United States of America

John Xia

USPTO Granted Patents = 10 

Average Co-Inventor Count = 4.9

ph-index = 3

Forward Citations = 15(Granted Patents)


Company Filing History:

goldMedal9 out of 1,284 
 
Maxim Integrated Products, Inc.
 patents
silverMedal1 out of 220 
 
Volterra Semiconductor Corporation
 patents

Years Active: 2014-2023

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10 patents (USPTO):
1. 11699753 - LDMOS transistors including vertical gates with multiple dielectric sections, and associated methods (2023-07-11),
2. 11557588 - Multi-transistor device including first and second LDMOS transistors having respective drift regions separated in a thickness direction by a shared RESURF layer (2023-01-17),
3. 11316044 - LDMOS transistors including vertical gates with multiple dielectric sections, and associated methods (2022-04-26),
4. 10964694 - Multi-transistor device including first and second LDMOS transistors having respective drift regions separated in a thickness direction by a shared RESURF layer (2021-03-30),
5. 10833164 - LDMOS transistors and associated systems and methods (2020-11-10),
6. 10622452 - Transistors with dual gate conductors, and associated methods (2020-04-14),
7. 10269916 - LDMOS transistors and associated systems and methods (2019-04-23),
8. 10229993 - LDMOS transistors including resurf layers and stepped-gates, and associated systems and methods (2019-03-12),
9. 10199475 - LDMOS transistors and associated systems and methods (2019-02-05),
10. 8709899 - Vertical gate LDMOS device (2014-04-29),

Title: The Innovative Contributions of John Xia

Introduction

John Xia is a prominent inventor based in Fremont, California, known for his significant contributions to the field of semiconductor technology. With a total of 10 patents to his name, Xia has made remarkable advancements in the design and functionality of LDMOS transistors.

Latest Patents

Among his latest patents, one notable invention is the LDMOS transistors that include vertical gates with multiple dielectric sections. This innovation features a lateral double-diffused metal-oxide-semiconductor transistor that comprises a silicon semiconductor structure and a vertical gate. The vertical gate consists of a gate conductor that extends from the outer surface of the silicon semiconductor structure into the structure itself, along with a gate dielectric layer that includes at least three dielectric sections. Each section separates the gate conductor from the silicon semiconductor structure by varying distances, enhancing the transistor's performance. Another significant patent involves a multi-transistor device that includes first and second LDMOS transistors with respective drift regions separated by a shared RESURF layer. This design optimizes the efficiency and functionality of the transistors in various applications.

Career Highlights

Throughout his career, John Xia has worked with leading companies in the semiconductor industry, including Maxim Integrated Products, Inc. and Volterra Semiconductor Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking technologies in the field.

Collaborations

John Xia has collaborated with notable professionals in the industry, including Badredin Fatemizadeh and Marco A Zuniga. These collaborations have further enriched his work and led to innovative solutions in semiconductor technology.

Conclusion

John Xia's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a leading inventor. His work continues to influence advancements in LDMOS transistors and related technologies.

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