The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Jun. 05, 2018
Maxim Integrated Products, Inc., San Jose, CA (US);
Tom K. Castro, Santa Clara, CA (US);
Marco A. Zuniga, Berkeley, CA (US);
Badredin Fatemizadeh, Palo Alto, CA (US);
Adam Brand, Palo Alto, CA (US);
John Xia, Fremont, CA (US);
Rajwinder Singh, Pleasanton, CA (US);
Min Xu, San Jose, CA (US);
Chi-Nung Ni, Foster City, CA (US);
Maxim Integrated Products, Inc., San Jose, CA (US);
Abstract
A lateral double-diffused metal-oxide-semiconductor (LDMOS) transistor includes a silicon semiconductor structure and a vertical gate. The vertical gate includes (a) a first gate conductor and a second gate conductor each extending from a first outer surface of the silicon semiconductor structure into the silicon semiconductor structure in a thickness direction, (b) a first separation dielectric layer separating the first gate conductor from the second gate conductor within the vertical gate, and (c) a gate dielectric layer separating each of the first gate conductor and the second gate conductor from the silicon semiconductor structure.