Tom K Castro

Title: The Innovations of Tom K Castro

Introduction

Tom K Castro is a notable inventor based in Santa Clara, California. He has made significant contributions to the field of semiconductor technology, particularly in the development of LDMOS transistors. With a total of four patents to his name, Castro's work has had a considerable impact on the industry.

Latest Patents

Among his latest patents is a groundbreaking design for LDMOS transistors that includes vertical gates with multiple dielectric sections. This innovation features a lateral double-diffused metal-oxide-semiconductor transistor that comprises a silicon semiconductor structure and a vertical gate. The vertical gate consists of a gate conductor that extends from the outer surface of the silicon semiconductor structure into the structure itself. Additionally, the gate dielectric layer includes at least three dielectric sections, each separated by different distances from the gate conductor, enhancing the transistor's performance.

Career Highlights

Tom K Castro has built a successful career at Maxim Integrated Products, Inc., where he has been instrumental in advancing semiconductor technologies. His expertise in LDMOS transistors has positioned him as a key player in the field, contributing to the company's reputation for innovation.

Collaborations

Throughout his career, Castro has collaborated with talented individuals such as Marco A Zuniga and Adam Brand. These partnerships have fostered a creative environment that has led to the development of cutting-edge technologies.

Conclusion

Tom K Castro's contributions to the field of semiconductor technology, particularly through his patents on LDMOS transistors, highlight his innovative spirit and dedication to advancing the industry. His work continues to influence the future of semiconductor design and application.