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For the Inventor, By the Inventor

Palo Alto, CA, United States of America

Badredin Fatemizadeh

USPTO Granted Patents = 18 

Average Co-Inventor Count = 5.4

ph-index = 4

Forward Citations = 40(Granted Patents)


Location History:

  • Sunnyvale, CA (US) (2014 - 2019)
  • Palo Alto, CA (US) (2019 - 2023)

Company Filing History:

goldMedal10 out of 1,284 
 
Maxim Integrated Products, Inc.
 patents
silverMedal8 out of 220 
 
Volterra Semiconductor Corporation
 patents

Years Active: 2014-2023

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18 patents (USPTO):
1. 11699753 - LDMOS transistors including vertical gates with multiple dielectric sections, and associated methods (2023-07-11),
2. 11557588 - Multi-transistor device including first and second LDMOS transistors having respective drift regions separated in a thickness direction by a shared RESURF layer (2023-01-17),
3. 11316044 - LDMOS transistors including vertical gates with multiple dielectric sections, and associated methods (2022-04-26),
4. 10964694 - Multi-transistor device including first and second LDMOS transistors having respective drift regions separated in a thickness direction by a shared RESURF layer (2021-03-30),
5. 10833164 - LDMOS transistors and associated systems and methods (2020-11-10),
6. 10622452 - Transistors with dual gate conductors, and associated methods (2020-04-14),
7. 10573744 - Self-aligned, dual-gate LDMOS transistors and associated methods (2020-02-25),
8. 10284072 - Voltage regulators with multiple transistors (2019-05-07),
9. 10269916 - LDMOS transistors and associated systems and methods (2019-04-23),
10. 10229993 - LDMOS transistors including resurf layers and stepped-gates, and associated systems and methods (2019-03-12),
11. 10199475 - LDMOS transistors and associated systems and methods (2019-02-05),
12. 10147801 - Transistor with buried P+ and source contact (2018-12-04),
13. 9722483 - Voltage regulators with multiple transistors (2017-08-01),
14. 9159804 - Vertical gate LDMOS device (2015-10-13),
15. 8969158 - Vertical gate LDMOS device (2015-03-03),

Title: Innovations of Badredin Fatemizadeh: Pioneering Advances in LDMOS Technology

Introduction

Badredin Fatemizadeh is an innovative inventor based in Palo Alto, California, with a remarkable portfolio of 18 patents. His contributions primarily focus on lateral double-diffused metal-oxide-semiconductor (LDMOS) technology, aimed at enhancing the performance and efficiency of electronic devices.

Latest Patents

Among his latest patents, Fatemizadeh's work includes innovations such as LDMOS transistors featuring vertical gates with multiple dielectric sections. This groundbreaking invention involves a silicon semiconductor structure, where the vertical gate comprises a gate conductor that extends from the outer surface into the silicon structure, enhanced by a gate dielectric layer with at least three distinct dielectric sections, each separated by varying distances from the silicon structure.

Another notable innovation is a multi-transistor device that includes two LDMOS transistors with respective drift regions, which are separated by a shared reduced surface field (RESURF) layer. This design not only improves functionality but also optimizes the overall efficiency of the transistors, showcasing Fatemizadeh's ingenuity in semiconductor technology.

Career Highlights

Badredin Fatemizadeh has had a successful career, working with reputable companies such as Maxim Integrated Products, Inc. and Volterra Semiconductor Corporation. His roles in these organizations have allowed him to push the boundaries of what is possible in semiconductor technology, driving advances that are applicable in various electronic devices.

Collaborations

Throughout his career, Fatemizadeh has collaborated with notable colleagues, including Marco A. Zuniga and John Xia. These collaborations have fostered a rich environment for innovation and have significantly contributed to the development of advanced semiconductor technologies.

Conclusion

Badredin Fatemizadeh's work in LDMOS technology represents a significant contribution to the field of electronics. His 18 patents reflect a commitment to innovation and a drive to enhance the performance of semiconductor devices, marking him as a key player in the industry.

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