The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Sep. 16, 2014
Volterra Semiconductor Llc, San Jose, CA (US);
Marco A. Zuniga, Palo Alto, CA (US);
Yang Lu, Fremont, CA (US);
Badredin Fatemizadeh, Sunnyvale, CA (US);
Jayasimha Prasad, San Jose, CA (US);
Amit Paul, Sunnyvale, CA (US);
Jun Ruan, Santa Clara, CA (US);
Volterra Semiconductor LLC, San Jose, CA (US);
Abstract
Described here are transistors and fabrication methods thereof. In one implementation, a transistor includes an n-well region implanted into a surface of a substrate, and a trench in the n-well region. The trench extends from the surface to a first depth. The trench includes a gate of conductive material in the trench, and dielectric material filling a volume of the trench not filled by the conductive material. The transistor also includes a p-type material in a first region extending from a second depth to a third depth, the second depth and the third depth being greater than the first depth. The transistor further includes a source region and a drain region.