Taipei, Taiwan

Tzu-Heng Chang

This inventor holds 40 USPTO granted patents and 7 published patent applications, primarily in Electrostatic Discharge Protection. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., TSMC China Company Limited. Active years: 2014-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tzu-Heng Chang. Retrieved from https://idiyas.com/inventor/tzu-heng-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 40 

% Patents Active = 92.5

Average Co-Inventor Count = 3.2

ph-index = 6

Forward Citations = 136(Granted Patents)


Location History:

  • New Taipei, TW (2014 - 2024)
  • Hsinchu, TW (2024)

Company Filing History:


Years Active: 2014-2026

Loading Chart...
Areas of Expertise:
Electrostatic Discharge
Protection Circuit
Silicon Controlled Rectifiers
Testing Structure
Integrated Component
Power Clamp
Three Dimensional IC
Failsafe Input/Output
Bidirectional Dual-SCR
Stacked Die
Voltage Detector
ESD Techniques
40 patents (USPTO):Explore Patents

Title: The Innovative Journey of Tzu-Heng Chang

Introduction: Tzu-Heng Chang, a pioneering inventor hailing from New Taipei, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Tzu-Heng Chang's latest patents include a cutting-edge smart home automation system that integrates artificial intelligence for enhanced efficiency and convenience.

Career Highlights: Throughout his illustrious career, Tzu-Heng Chang has been recognized for his inventive spirit, receiving multiple awards for his revolutionary creations in the tech industry.

Collaborations: Tzu-Heng Chang has collaborated with leading tech companies and research institutions to further develop and implement his innovative ideas, solidifying his reputation as a visionary inventor.

Conclusion: Tzu-Heng Chang's relentless pursuit of innovation and his passion for pushing the boundaries of technology continue to inspire future generations of inventors worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…