The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Sep. 21, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tsmc China Company, Limited, Shanghai, CN;
HoChe Yu, Hsinchu, TW;
Fong-Yuan Chang, Hsinchu, TW;
XinYong Wang, Hsinchu, TW;
Chih-Liang Chen, Hsinchu, TW;
Tzu-Heng Chang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
TSMC CHINA COMPANY, LIMITED, Shanghai, CN;
Abstract
A semiconductor device includes a through-silicon via (TSV) in a TSV zone in a substrate and the TSV extends through the substrate; an ESD cell proximal to a first end of the TSV and in contact with the TSV zone, the ESD cell including a set of diodes electrically connected in parallel to each other; an antenna pad electrically connected to a second end of the TSV; and an antenna electrically connected to the antenna pad and extending in a first direction, the first direction is parallel to a major axis of the TSV. The semiconductor device includes a conductive pillar extending parallel to the TSV at a same side of the substrate as the antenna pad, wherein a first end of the conductive pillar electrically connects to the antenna pad, and a second end of the conductive pillar electrically connects to the set of diodes of the ESD cell.