The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2023

Filed:

Aug. 06, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Tzu-Heng Chang, New Taipei, TW;

Kuo-Ji Chen, New Taipei, TW;

Ming-Hsiang Song, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0274 (2013.01); H01L 27/0207 (2013.01); H01L 27/0266 (2013.01); H01L 27/0292 (2013.01); H01L 27/0296 (2013.01); H01L 27/0886 (2013.01);
Abstract

A device includes standard cells in a layout of an integrated circuit, the standard cells includes first and second standard cells sharing a first active region and a second active region. The first standard cell includes first and second gates. The first gate includes a first gate finger and a second gate finger that are arranged over the first active region, for forming the first transistor and the second transistor. The second gate is separate from the first gate, the second gate includes a third gate finger and a fourth gate finger that are arranged over the second active region, for forming the third transistor and the fourth transistor. The second standard cell includes a third gate arranged over the first active region and the second active region, for forming the fifth transistor and the sixth transistor. The first to fourth transistors operate as an electrostatic discharge protection circuit.


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