The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Jul. 03, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Tzu-Heng Chang, New Taipei, TW;

Hsin-Yu Chen, Hsinchu, TW;

Pin-Hsin Chang, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 89/60 (2025.01); H02H 9/04 (2006.01);
U.S. Cl.
CPC ...
H10D 89/811 (2025.01); H02H 9/046 (2013.01);
Abstract

The present disclosure provides electrostatic discharge circuits and structures and methods for operating the electrostatic discharge circuits and structures. A circuit includes a first transistor and a second transistor. Each of the first transistor and second transistor includes a drain, a source, and a gate. The drain of the first transistor is connected to a first terminal; the source thereof is connected to receive a first voltage, and the gate thereof is connected to receive a second voltage different from the first voltage. The source and the gate of the second transistor are connected to receive the second voltage, and the drain thereof is connected to the first terminal. In response to the terminal reaching a trigger voltage, the first transistor is configured to be turned on, such that electrostatic charges at the first terminal are configured to be discharged through the first transistor.


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