The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Mar. 25, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tsmc China Company, Limited, Shanghai, CN;
HoChe Yu, Hsinchu, TW;
Fong-Yuan Chang, Hsinchu, TW;
XinYong Wang, Hsinchu, TW;
Chih-Liang Chen, Hsinchu, TW;
Tzu-Heng Chang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsicnhu, TW;
TSMC CHINA COMPANY, LIMITED, Shanghai, CN;
Abstract
A method of making a semiconductor device includes manufacturing an ESD cell over a substrate, wherein the ESD cell includes multiple diodes connected in parallel to each other. The method includes manufacturing a conductive pillar electrically connected to the ESD cell of the semiconductor device; manufacturing a through-silicon via (TSV) extending through the substrate, wherein the TSV extends through the substrate within a TSV zone having a TSV zone perimeter, and wherein a first end of the TSV is at a same side of the substrate as the ESD cell, and a second end of the TSV is at a different side of the substrate from the ESD cell. The method includes manufacturing an antenna extending parallel to the TSV at a same side of the substrate as the ESD cell; and manufacturing an antenna pad electrically connected to the TSV, the antenna, and the conductive pillar.