The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2024

Filed:

Dec. 14, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Tzu-Heng Chang, New Taipei, TW;

Kuo-Ji Chen, New Taipei, TW;

Ming-Hsiang Song, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/08 (2006.01); H01L 27/02 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0274 (2013.01); H01L 27/0207 (2013.01); H01L 27/0266 (2013.01); H01L 27/0292 (2013.01); H01L 27/0296 (2013.01); H01L 27/0886 (2013.01);
Abstract

A device includes standard cells in a layout of an integrated circuit. The standard cells include a first standard cell and a second standard cell disposed next to each other. The first standard cell is configured to operate as an electrostatic discharge (ESD) protection circuit and includes a first gate and a second gate. The first gate includes a first gate finger and a second gate finger that are arranged over a first active region, for forming a first transistor and a second transistor, respectively. The second gate is separate from the first gate. The second gate includes a third gate finger and a fourth gate finger that are arranged over a second active region, for forming a third transistor and a fourth transistor, respectively. The first transistor and the second transistor are connected in parallel, and the third transistor and the fourth transistor are connected in parallel.


Find Patent Forward Citations

Loading…