Company Filing History:

16 out of 10,295

Tokyo Electron Limited

where one patent can have more than one assignee

Years Active: 2005-2024

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16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12018370 - Film-forming method and film-forming apparatus (2024-06-25),

2. 10636649 - Method and apparatus for forming silicon oxide film on tungsten film (2020-04-28),

3. 9472394 - Method of forming silicon oxide film (2016-10-18),

4. 9472393 - Method and apparatus for forming silicon oxide film (2016-10-18),

5. 9005459 - Film deposition method and film deposition apparatus (2015-04-14),

6. 8658247 - Film deposition method (2014-02-25),

7. 8642486 - Thin film forming method, thin film forming apparatus, and program (2014-02-04),

8. 8461059 - Batch CVD method and apparatus for semiconductor process (2013-06-11),

9. 7926445 - Oxidizing method and oxidizing unit for object to be processed (2011-04-19),

10. 7674724 - Oxidizing method and oxidizing unit for object to be processed (2010-03-09),

11. 7625604 - Heat treatment method and heat treatment apparatus (2009-12-01),

12. 7605095 - Heat processing method and apparatus for semiconductor process (2009-10-20),

13. 7419550 - Oxidizing method and oxidizing unit of object for object to be processed (2008-09-02),

14. 7304003 - Oxidizing method and oxidizing unit for object to be processed (2007-12-04),

15. 7125811 - Oxidation method for semiconductor process (2006-10-24),

Title: Toshiyuki Ikeuchi: Innovator in Film-Forming Technologies

Introduction

Toshiyuki Ikeuchi is a prominent inventor based in Nirasaki, Japan. He has made significant contributions to the field of film-forming technologies, holding a total of 16 patents. His innovative approaches have advanced the methods used in various industrial applications.

Latest Patents

Ikeuchi's latest patents include a film-forming method and apparatus that enhances the efficiency of film production. This method involves forming a first film by repeatedly performing a unit film operation, which includes supplying a first raw material gas to a substrate. Additionally, he has developed a method for forming a silicon oxide film on a tungsten film, which involves a series of processes including arranging the object in a reduced pressure environment and forming a silicon seed layer.

Career Highlights

Throughout his career, Toshiyuki Ikeuchi has worked with notable companies such as Tokyo Electron Limited and Intel Corporation. His experience in these leading technology firms has allowed him to refine his skills and contribute to groundbreaking advancements in film-forming technologies.

Collaborations

Ikeuchi has collaborated with talented individuals in his field, including Keisuke Suzuki and Kimiya Aoki. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Toshiyuki Ikeuchi's work in film-forming technologies exemplifies the spirit of innovation. His contributions have not only advanced industrial processes but have also paved the way for future developments in the field.

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