The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Jan. 14, 2014
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Hiroki Murakami, Nirasaki, JP;
Toshiyuki Ikeuchi, Nirasaki, JP;
Jun Sato, Oshu, JP;
Yuichiro Morozumi, Tokyo, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01); H01L 21/677 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02238 (2013.01); H01L 21/02164 (2013.01); H01L 21/02252 (2013.01); H01L 21/02255 (2013.01); H01L 21/32105 (2013.01); H01L 21/67757 (2013.01);
Abstract
A method of forming a silicon oxide film includes forming a silicon film on a base, the base being a surface to be processed of an object to be processed, and forming a silicon oxide film on the base by oxidizing the silicon film. Between the forming a silicon film and the forming a silicon oxide film, exposing the object to be processed having the silicon film formed thereon to an atmosphere containing at least an oxidizing component is performed.