The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2009
Filed:
Aug. 08, 2003
Keisuke Suzuki, Tokyo-To, JP;
Wenling Wang, Tokyo-To, JP;
Tsukasa Yonekawa, Tokyo-To, JP;
Toshiyuki Ikeuchi, Tokyo-To, JP;
Toru Sato, Tokyo-To, JP;
Keisuke Suzuki, Tokyo-To, JP;
Wenling Wang, Tokyo-To, JP;
Tsukasa Yonekawa, Tokyo-To, JP;
Toshiyuki Ikeuchi, Tokyo-To, JP;
Toru Sato, Tokyo-To, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
The present invention relates to a thermal processing method includes a first thermal processing step that carries out thermal processing steps using a plurality of first substrates, wherein thin films are formed on surfaces of the plurality of first substrates by means of less consumption of the process gas than on surfaces of production substrates. Then, a second thermal processing step carries out thermal processing steps by using a plurality of second substrates, wherein thin films are formed on surfaces of the plurality of second substrates by means of more consumption of the process gas than on the surfaces of the plurality of first substrates, and wherein heating units are respectively adjusted to respective temperature set values set during the previous step. Then, a third thermal processing step carries out thermal processing steps by using production substrates as the plurality of substrates, wherein the plurality of heating units are respectively adjusted to the respective temperature set values corrected during the previous step.