The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2020

Filed:

Jul. 30, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Kyungseok Ko, Gyeonggi-do, KR;

Koji Sasaki, Yamanashi, JP;

Toshiyuki Ikeuchi, Yamanashi, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 27/11575 (2017.01); H01L 27/11582 (2017.01); C23C 16/02 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02211 (2013.01); C23C 16/0272 (2013.01); C23C 16/402 (2013.01); C23C 16/45502 (2013.01); C23C 16/45529 (2013.01); H01L 21/022 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/02304 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01); H01L 21/76834 (2013.01); H01L 2221/1073 (2013.01);
Abstract

A method for forming a silicon oxide film on a tungsten film includes performing a first process of arranging an object to be processed in a processing container kept under a reduced pressure, the object including a tungsten film and a natural oxide film being formed on a surface of the tungsten film, performing a second process of forming a silicon seed layer by adsorbing a silicon-containing gas to the tungsten film, subsequently performing a third process of annealing the object and forming the silicon oxide film by a reaction of the natural oxide film and the silicon seed layer and subsequently performing a fourth process of forming an ALD silicon oxide film by ALD using a silicon-containing gas and an oxygen active species.


Find Patent Forward Citations

Loading…