Tokyo Electron Limited

Intel Corporation

Toshiyuki Ikeuchi

Keisuke Suzuki

Kota Umezawa

Kimiya Aoki

Kazuhide Hasebe

Pao-Hwa Chou

Kazuya Yamamoto

Satoshi Takagi

Hiroki Murakami

Anthony Dip

Jun Sato

Akinobu Kakimoto

David Paul Brunco

Wenling Wang

Yuichiro Morozumi

Akira Shimizu

Katsuhiko Komori

Tetsuya Shibata

Koji Sasaki

Masayuki Hasegawa

Kyungseok Ko

Tsukasa Yonekawa

Toshihiko Takahashi

Steven Robert Soss

Toru Sato

Kentaro Sera

Kentarou Sera

Toru Kanazawa

Tatsuhiko Tanimura

A film-forming method includes: forming a first film by performing an operation of forming a unit film a plurality of times, the operation including sub-step of supplying a first raw material gas containing a first element to a substrate and causing the first raw material gas to be adsorbed thereon, and sub-step of supplying a first reaction gas to the substrate; and forming a second film on the substrate by performing an operation of forming a unit film at least once, the operation including sub-step of supplying a second raw material gas containing a second element to the substrate and causing the second raw material gas to be adsorbed thereon, and sub-step of supplying a second reaction gas to the substrate, wherein a mixed film is formed by performing the forming the first film and the forming the second film, respectively once, or a plurality of times.

Film-forming method and film-forming apparatus

A method for forming a silicon oxide film on a tungsten film includes performing a first process of arranging an object to be processed in a processing container kept under a reduced pressure, the object including a tungsten film and a natural oxide film being formed on a surface of the tungsten film, performing a second process of forming a silicon seed layer by adsorbing a silicon-containing gas to the tungsten film, subsequently performing a third process of annealing the object and forming the silicon oxide film by a reaction of the natural oxide film and the silicon seed layer and subsequently performing a fourth process of forming an ALD silicon oxide film by ALD using a silicon-containing gas and an oxygen active species.

Method and apparatus for forming silicon oxide film on tungsten film

A silicon oxide film forming method includes: forming an amorphous silicon film, including: adsorbing an adsorbate containing silicon to a workpiece by supplying a source gas containing chlorine and silicon into a reaction chamber accommodating the workpiece, activating the source gas, and reacting the activated source gas with the workpiece; and removing chlorine contained in the adsorbate by supplying hydrogen gas into the reaction chamber and activating the hydrogen gas, and reacting the activated hydrogen gas with the adsorbate, wherein removing the chlorine is performed after adsorbing the adsorbate is performed, thereby forming the amorphous silicon film on the workpiece; and forming a silicon oxide film on the workpiece by supplying an oxidizing gas into the reaction chamber and oxidizing the amorphous silicon film, wherein forming the amorphous silicon film and forming the silicon oxide film are repeated in this order plural times.

Method and apparatus for forming silicon oxide film

A method of forming a silicon oxide film includes forming a silicon film on a base, the base being a surface to be processed of an object to be processed, and forming a silicon oxide film on the base by oxidizing the silicon film. Between the forming a silicon film and the forming a silicon oxide film, exposing the object to be processed having the silicon film formed thereon to an atmosphere containing at least an oxidizing component is performed.

Method of forming silicon oxide film

A disclosed film deposition method includes steps of loading plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves; depositing a silicon oxide film on the plural substrates by supplying a silicon-containing gas and an oxygen-containing gas to the reaction chamber; etching the silicon oxide film deposited on the plural substrates in the step of depositing by supplying a fluorine-containing gas and an ammonia gas to the reaction chamber; and alternately repeating the step of depositing and the step of etching.

Film deposition method and film deposition apparatus

A disclosed film deposition method comprises alternately repeating an adsorption step and a reaction step with an interval period therebetween. The adsorption step includes opening a first on-off valve of a source gas supplying system for a predetermined time period thereby to supply a source gas to a process chamber, closing the first valve after the predetermined time period elapses, and confining the source gas within the process tube, thereby allowing the source gas to be adsorbed on an object to be processed, while a third on-off valve of a vacuum evacuation system is closed. The reaction step includes opening a second on-off valve of a reaction gas supplying system thereby to supply a reaction gas to the process chamber, thereby allowing the source gas and the reaction gas to react with each other thereby to produce a thin film on the object to be processed.

Film deposition method

A control unit heats a reaction pipe to a load temperature by controlling a temperature-raising heater, and then makes semiconductor wafers received in the reaction pipe. Next, the control unit heats the reaction pipe in which the semiconductor wafers are received to a film formation temperature by controlling the temperature-raising heater, and then forms thin films on the semiconductor wafers by supplying a film forming gas into the reaction pipe from a process gas introducing pipe. Also, the control unit sets the load temperature to a temperature higher than the film formation temperature.

Thin film forming method, thin film forming apparatus, and program

A batch CVD method repeats a cycle including adsorption and reaction steps along with a step of removing residual gas. The adsorption step is preformed while supplying the source gas into the process container by first setting the source gas valve open for a first period and then setting the source gas valve closed, without supplying the reactive gas into the process container by keeping the reactive gas valve closed, and without exhausting gas from inside the process container by keeping the exhaust valve closed. The reaction step is performed without supplying the source gas into the process container by keeping the source gas valve closed, while supplying the reactive gas into the process container by setting the reactive gas valve open, and exhausting gas from inside the process container by setting the exhaust valve to gradually decrease its valve opening degree from a predetermined open state.

Batch CVD method and apparatus for semiconductor process

An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. In the atmosphere forming step, the oxidative gas is adapted to be supplied from the main supplying unit of the oxidative gas and the sub supplying unit of the oxidative gas.

Oxidizing method and oxidizing unit for object to be processed

An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a supplying unit of an oxidative gas being provided at one end of the processing container, a plurality of supplying units of a reducing gas being provided at a plurality of positions in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. The atmosphere forming step has: a selecting step of selecting a predetermined supplying unit of a reducing gas among the plurality of supplying units of a reducing gas, based on an arrangement number and respective arrangement positions of the plurality of objects to be processed in the processing container; an oxidative-gas supplying step of supplying the oxidative gas into the processing container by means of the supplying unit of an oxidative gas; and an reducing-gas supplying step of supplying the reducing gas into the processing container by means of only the supplying unit of a reducing gas selected by the selecting step.

The present invention relates to a thermal processing method includes a first thermal processing step that carries out thermal processing steps using a plurality of first substrates, wherein thin films are formed on surfaces of the plurality of first substrates by means of less consumption of the process gas than on surfaces of production substrates. Then, a second thermal processing step carries out thermal processing steps by using a plurality of second substrates, wherein thin films are formed on surfaces of the plurality of second substrates by means of more consumption of the process gas than on the surfaces of the plurality of first substrates, and wherein heating units are respectively adjusted to respective temperature set values set during the previous step. Then, a third thermal processing step carries out thermal processing steps by using production substrates as the plurality of substrates, wherein the plurality of heating units are respectively adjusted to the respective temperature set values corrected during the previous step.

Heat treatment method and heat treatment apparatus

A heat processing method for a semiconductor process includes placing a plurality of target substrates stacked at intervals in a vertical direction within a process field of a process container. Each of the target substrates includes a process object layer on its surface. Then, the method includes supplying an oxidizing gas and a deoxidizing gas to the process field while heating the process field, thereby causing the oxidizing gas and the deoxidizing gas to react with each other to generate oxygen radicals and hydroxyl group radicals, and performing oxidation on the process object layer of the target substrates by use of the oxygen radicals and the hydroxyl group radicals. Then, the method includes heating the process object layer processed by the oxidation, within an atmosphere of an annealing gas containing ozone or oxidizing radicals, thereby performing annealing on the process object layer.

Heat processing method and apparatus for semiconductor process

An oxidizing method for includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, a supplying unit of an oxidative gas being provided at one end of the processing container, a plurality of supplying units of a reducing gas being provided at a plurality of positions in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form active oxygen species and active hydroxyl species; and an oxidizing step of oxidizing surfaces of the plurality of objects. The atmosphere forming step has: a selecting step of selecting a predetermined supplying unit of a reducing gas among the plurality of supplying units, based on an arrangement number and respective arrangement positions of the plurality of objects; an oxidative-gas supplying step of supplying the oxidative gas into the processing container by means of the supplying unit of an oxidative gas and an reducing-gas supplying step of supplying the reducing gas into the processing container by means of only the supplying unit of a reducing gas selected by the selecting step.

Oxidizing method and oxidizing unit of object for object to be processed

An oxidation method for a semiconductor process, which oxidizes a surface of a target substrate, includes heating a process container that accommodates the target substrate, and supplying hydrogen gas and oxygen gas into the process container while exhausting the process container. The oxidation method also includes causing the hydrogen gas and the oxygen gas to react with each other in the process container at a process temperature and a process pressure to generate water vapor, and oxidizing the surface of the target substrate by the water vapor. The process pressure is set at 2000 Pa (15 Torr) or more.

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Nirasaki, Japan

Toshiyuki Ikeuchi