logo

For the Inventor, By the Inventor

Tokyo, Japan

Tetsuya Homma

This inventor holds 20 USPTO granted patents, primarily in Semiconductor Manufacturing. Top assignees: Nec Corporation, Nec C Orporation, Shibaura Institute of Technology. Active years: 1993-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tetsuya Homma. Retrieved from https://idiyas.com/inventor/tetsuya-homma

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20

% Patents Active = 95.0

Average Co-Inventor Count = 1.5

ph-index = 12

Forward Citations = 1,518(Granted Patents)


Company Filing History:

goldMedal18 out of 36,684 
 
Nec Corporation
 patents
silverMedal1 out of 196 
 
Nec C Orporation
 patents
bronzeMedal1 out of 34 
 
Shibaura Institute of Technology
 patents

Years Active: 1993-2012

Loading Chart...
Areas of Expertise:
Semiconductor Device
Multilevel Interconnections
Silicon Oxide
Fluorine Compound
Chemical Vapor Deposition
Integrated Circuit
Abrasive Manufacturing
Organic Resin Layer
Spin On Glass
Insulating Films
Interconnect Structure
Fabrication Process
20 patents (USPTO):Explore Patents
1. 8317896 - Method of recycling useful metal (2012-11-27),
2. 6054383 - Fabrication method of semiconductor device (2000-04-25),
3. 5939771 - Semiconductor device having an organic resin layer and silicon oxide (1999-08-17),
4. 5891234 - Spin on glass material and method for forming a semiconductor device by (1999-04-06),
5. 5840631 - Method of manufacturing semiconductor device (1998-11-24),
6. 5776829 - Method for forming multilevel interconnections in a semiconductor device (1998-07-07),
7. 5744378 - Method for fabricating a semiconductor device having multilevel (1998-04-28),
8. 5607880 - Method of fabricating multilevel interconnections in a semiconductor (1997-03-04),
9. 5521424 - Semiconductor device having a silicon oxide film containing fluorine (1996-05-28),
10. 5506177 - Fabrication process for multilevel interconnections in a semiconductor (1996-04-09),
11. 5491108 - Method of producing semiconductor integrated circuit device having (1996-02-13),
12. 5468682 - Method of manufacturing semiconductor device using the abrasive (1995-11-21),
13. 5444023 - Method of fabricating a semiconductor device having a multilayer wiring (1995-08-22),
14. 5420075 - Forming multi-layered interconnections with fluorine compound treatment (1995-05-30),
15. 5407529 - Method for manufacturing semiconductor device (1995-04-18),

Title: The Innovative Mind of Tetsuya Homma

Introduction: Tetsuya Homma is a visionary inventor hailing from the bustling city of Tokyo, Japan. With a passion for creating groundbreaking solutions, he has made significant contributions to the world of technology and innovation.

Latest Patents: Tetsuya Homma's latest patents focus on advancements in artificial intelligence and robotics, revolutionizing the way we interact with technology on a daily basis. His inventions have garnered international recognition for their ingenuity and practicality.

Career Highlights: Throughout his illustrious career, Tetsuya Homma has worked with top research institutions and leading tech companies to bring his ideas to life. His dedication to pushing the boundaries of what is possible has led to numerous successful inventions that have shaped the industry.

Collaborations: Tetsuya Homma is known for his collaborative spirit, often partnering with fellow inventors, engineers, and designers to bring multidisciplinary expertise to his projects. His ability to work seamlessly in teams has resulted in innovative solutions that have had a lasting impact.

Conclusion: In conclusion, Tetsuya Homma stands as a beacon of innovation in the field of technology, with a remarkable track record of turning visionary ideas into reality. His relentless pursuit of excellence and commitment to pushing the boundaries of what is possible continue to inspire inventors and creators around the world.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…