The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 1995
Filed:
Mar. 04, 1993
Applicant:
Inventor:
Tetsuya Homma, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 156653 ; 156657 ; 1566611 ; 156904 ; 437229 ;
Abstract
In a pattern formation method which employs a resist system of tri-level structure the present method is characterized in that it uses a fluorine contained silicon dioxide film as the intermediate film. Since this fluorine contained silicon dioxide film can be formed at a low temperature with a small volume shrinkage, it is possible to eliminate the generation of cracks and delaminations due to heat treatment. Moreover, it is possible to improve the adhesive strength between an etching object such as a noble metal film and the lower organic film since the lower organic film can be formed by heat treatment at a low temperature.