The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 1999
Filed:
Oct. 29, 1996
Tatsuya Usami, Tokyo, JP;
Tetsuya Homma, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
On manufacturing a semiconductor device, preparation is made of an organic layer (101) of a resin which has a relative dielectric constant between 1.8 and 3.5, both inclusive, and which is selected from the group consisting of a polyimide resin and a fluororesin. The organic layer has a slit. A first metal (105) is buried in the slit. A silicon oxide layer (106) containing fluorine is formed on the organic layer so that the silicon oxide layer has a hole on the first metal. A second metal (107) is buried in the hole. Preferably, an additional organic layer (101') of the resin is formed on the silicon oxide layer so that the additional organic layer has an additional slit on the second metal. In this case, a first additional metal (105') is buried in the additional slit. In addition, an additional silicon oxide layer (106') containing fluorine may be formed on the additional organic layer so that the additional silicon oxide layer has an additional hole on the first additional metal. In this event, a second additional metal (107') is buried in the additional hole.