The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 1998
Filed:
Nov. 25, 1996
Applicant:
Inventor:
Tetsuya Homma, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437195 ; 437240 ; 437241 ; 437242 ;
Abstract
At least one of an interlayer insulating film is formed by fluorine contained silicon oxynitride which is obtained by chemical deposition growth process using fluoroalkoxysilane gas, nitrogen gas contained gas, and oxygen gas contained gas. The at least one-film is formed at a temperature of lower than 200.degree. C. As a result, reliability of a semiconductor device to be fabricated as described above is enhanced.