Tat-Sing P Chow

Title: The Innovations of Tat-Sing P Chow

Introduction

Tat-Sing P Chow is a notable inventor based in Schenectady, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His work has advanced the understanding and functionality of various electronic devices.

Latest Patents

Among his latest patents is a method to enhance the operating characteristics of FET, IGBT, and MCT structures. This innovation involves doping the P type base region in a MOSFET or an IGBT with a combination of boron and one or more of indium, aluminum, and gallium. This method provides a structure with a lower P type doping level in the channel portion than in the remainder of the structure, eliminating the need for counter doping of the channel. Additionally, he has developed a self-aligned transistor device that includes a patterned refractory dielectric layer and a gate insulator layer, which enhances the performance of semiconductor devices.

Career Highlights

Tat-Sing P Chow has worked with prominent companies such as General Electric Company and Fairchild Semiconductor Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking technologies in the semiconductor industry.

Collaborations

Throughout his career, Chow has collaborated with esteemed colleagues, including Bantval J Baliga and Mario Ghezzo. These partnerships have fostered innovation and have led to the development of advanced semiconductor technologies.

Conclusion

Tat-Sing P Chow's contributions to semiconductor technology through his patents and collaborations have significantly impacted the industry. His innovative methods continue to influence the design and functionality of electronic devices.