The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 1990
Filed:
Oct. 07, 1988
Applicant:
Inventors:
Tat-Sing P Chow, Schenectady, NY (US);
Bantval J Baliga, Raleigh, NC (US);
Assignee:
General Electric Company, Schenectady, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01C / ;
U.S. Cl.
CPC ...
357 234 ; 307446 ; 307570 ; 357 43 ; 357 238 ; 357 38 ;
Abstract
An IGBT and FET are integrated in a common semiconductor body and share common source/emitter, base and drift regions and an insulated gate electrode. The ON-resistance and turn-off time of this device can be controlled by connecting the drain and collector electrodes to one main terminal for the device with a resistor between either the drain region/drift region interface or the collector junction and the main terminal of the device.