The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 1982
Filed:
Sep. 15, 1980
Applicant:
Inventors:
Tat-Sing P Chow, Schenectady, NY (US);
Mario Ghezzo, Ballston Lake, NY (US);
Assignee:
General Electric Company, Schenectady, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; H01L / ;
U.S. Cl.
CPC ...
427 93 ; 156643 ; 156649 ; 427 94 ; 427 96 ; 430313 ; 430318 ;
Abstract
A method of reducing lateral field oxidation in the vicinity of the active regions of a silicon substrate in which integrated circuit elements are to be formed. Mesas, the tops of which are the active regions, are formed by ion beam etching of the silicon substrate. The mesas are protected by caps of silicon nitride overlying the top and sides of the mesas during field oxide formation. Subsequently the caps of silicon nitride are removed and the exposed sides of the mesas are oxidized to form a thick layer of silicon dioxide contiguous to the mesas.