The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Sep. 22, 1994
Applicant:
Inventors:
Tat-Sing Paul Chow, Schenectady, NY (US);
Victor Albert Keith Temple, Clifton Park, NY (US);
Assignee:
Fairchild Semiconductor Corporation, South Portland, ME (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1332 ;
U.S. Cl.
CPC ...
H01L 2/1332 ;
Abstract
Doping of the P type base region in a MOSFET or an IGBT with a combination of boron and one or more of indium, aluminum and gallium, provides a structure having a lower P type doping level in the channel portion of the structure than in the remainder of the structure without requiring counter doping of the channel. The doping level of the emitter region of an MCT is kept high everywhere except in the channel in order to provide a fast turn-off time for the MCT.