The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 1980

Filed:

Jun. 11, 1979
Applicant:
Inventors:

Dale M Brown, Schenectady, NY (US);

Tat-Sing P Chow, Schenectady, NY (US);

James F Gibbons, Palo Alto, CA (US);

Paul A McConnelee, Schenectady, NY (US);

Assignee:

General Electric Company, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148-6 ; 427 88 ; 427 91 ; 427 93 ; 357 67 ; 357 71 ;
Abstract

A method of making a composite conductive structure is described. The structure includes an insulating substrate on which is provided a conductor of a refractory metal substantially nonreactive with silicon dioxide covered by a layer of a silicide of the refractory metal and a layer of silicon dioxide. The method includes depositing a layer of polycrystalline silicon over the conductor and the insulating substrate, reacting the layer of polycrystalline silicon with the conductor to form a refractory metal silicide, removing the unreacted portion of the layer of polycrystalline silicon, and then oxidizing the exposed surface of the refractory metal silicide into a layer of silicon dioxide.


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