James F Gibbons

Title: Innovations by James F. Gibbons in Semiconductor Technology

Introduction

James F. Gibbons, based in Palo Alto, California, is a prolific inventor holding 38 patents. His contributions primarily focus on the enhancement of semiconductor device performance through innovative methods involving gate structures and workfunction adjustability.

Latest Patents

Among his significant inventions, Gibbons holds a notable patent for a "Method for forming gate electrode with depletion suppression and tunable workfunction." This cutting-edge technology aims to improve semiconductor device performance by implementing a gate structure that features both a tunable effective workfunction and reduced gate depletion effects. In one embodiment, the design of the threshold voltage of a semiconductor device is adjusted by utilizing a gate with a specially selected workfunction, thereby enabling operation at specific voltages. The gate's construction includes two different conductive materials with distinct electric workfunctions that contribute significantly to the gate's overall performance. By carefully selecting the composition, thickness, and arrangement of these two materials, the resulting gate electrode achieves a workfunction that is uniquely different from the individual layers, ultimately setting the desired threshold voltage. This innovative approach not only enhances current drive but also mitigates gate depletion effects across various semiconductor devices.

Career Highlights

Gibbons has had a diverse career, with experience at notable companies such as Applied Materials, Inc. and Sera Solar Corporation. His work at these organizations has been instrumental in advancing semiconductor technology, leading to the development of key devices utilized in various applications.

Collaborations

Throughout his career, Gibbons has collaborated with esteemed professionals in the field, including colleagues like Christian M. Gronet and Judy L. Hoyt. These partnerships have further enriched his innovative contributions and the breadth of his patents.

Conclusion

James F. Gibbons' work in semiconductor technology, particularly with his advancements in gate structures and workfunction variability, has made a lasting impact on the field. His extensive patent portfolio reflects his dedication to innovation, and his collaborations with other industry professionals continue to inspire further advancements in semiconductor design and functionality.