Applied Materials, Inc.

Other

Sera Solar Corporation

Leland Stanford Junior University

Hewlett-packard Company

General Electric Company

James F Gibbons

Christian M Gronet

Judy L Hoyt

George W Cogan

Theodore I Kamins

Lee Allan Christel

Martin P Scott

David B Noble

Arnon Gat

Levy Gerzberg

Nathan S Lewis

Clifford A King

Steven Hung

Garret R Moddel

Stephen Laderman

Paul Alan McConnelee

Roger D Melen

Dale M Brown

Tat-Sing P Chow

Dietrich W Vook

Gary E Miner

Kenneth E Williams

Scott K Reynolds

J Thomas Merchant

Semiconductor device performance is improved via a gate structure having a tunable effective workfunction and reduced gate depletion effects. According to an example embodiment, the design threshold voltage of a semiconductor device is adjusted in a manner that includes providing a gate having a workfunction that enables operation of the semiconductor device at a selected voltage. The gate is formed having two different conductive materials with different electric workfunctions that both significantly contribute to the overall workfunction of the gate. The relative composition, thickness, and arrangement of each of the two conductive materials is selected to attain a gate electrode workfunction that is different than the workfunctions of each of the two layers and that sets the threshold voltage of the semiconductor device. The adjustability of the effective workfunction of the gate electrode can be applied to a variety of semiconductor devices. The ability to reduce gate depletion effects also provides enhanced device current drive.

Method for forming gate electrode with depletion suppression and tunable workfunction

Gate electrode with depletion suppression and tunable workfunction

A rapid thermal heating apparatus including a plurality of radiant energy sources and reflectors associated with the radiant energy sources. The radiant energy sources and reflectors direct radiation through a window of an envacuable chamber to radiate regions of a substrate in the chamber with a pattern of radiation intensity.

Rapid thermal heating apparatus and method including an infrared camera to measure substrate temperature

A rapid thermal heating apparatus in which lamps are disposed in a plurality of light pipes arranged to illuminate and supply heat to a substrate. The light pipes are positioned so that the illumination patterns overlap. The energy supplied to the lamps is controlled to provide a predetermined heating pattern to the substrate. A liquid cooled window cooperates with the light pipes to transmit energy to a wafer disposed in an evacuated chamber.

Rapid thermal heating apparatus and method

A rapid thermal heating apparatus including an infrared camera located outside an evacuable chamber to sense infrared radiation emitted from different regions of a substrate.

Rapid thermal heating apparatus and method including an infrared camera

A rapid thermal heating apparatus including a substrate support and a bearing assembly in a processing chamber. The substrate support is mounted on the bearing assembly so that it may be rotated. A rotatable drive ring is located external to the processing chamber. The drive ring provides a force to couple the bearing assembly to the drive ring without the use of a vacuum seal so that rotation of the drive ring causes the substrate support to rotate.

Rapid thermal heating apparatus including a substrate support and an

Rapid thermal heating apparatus including a plurality of light pipes and

A rapid thermal heating apparatus including an evacuable chamber having a window, a plurality of radiant energy sources and reflectors associated with the radiant energy sources. The radiant energy sources are disposed outside of the chamber and positioned adjacent to the window. They have a central longitudinal axis that extends in a substantially perpendicular direction relative to the window. The reflectors direct radiant energy through the window to radiate predetermined regions of a backside surface of a substrate in the chamber. The reflectors extend along a major portion of the longitudinal axis of the radiant energy sources. The substrate sits on a support in the chamber, and a source of processing gas, including a gas inlet manifold, is provided for passing processing gas to a frontside surface of the substrate.

Rapid thermal heating apparatus including a plurality of radiant energy

Rapid thermal heating apparatus and control therefor

A rapid thermal heating apparatus including an evacuable chamber, a plurality of radiant energy sources, reflectors associated with the radiant energy sources, and a cooling passageway adapted to include a coolant to cool the reflectors.

Cooling chamber for a rapid thermal heating apparatus

Rapid thermal heating apparatus and method utilizing plurality of light

The present invention comprises a method of fabricating devices and circuits employing at least one heteroepitaxial layer under strain. The thickness of the heteroepitaxial layer is more than two times the calculated equilibrium critical thickness for an uncapped heteroepitaxial layer upon a crystalline substrate, based on previously known equilibrium theory for the uncapped layer. Subsequent to growth of the heteroepitaxial layer, the structure is processed at temperatures higher than the growth temperature of the heteroepitaxial layer. The strained heteroepitaxial layer (second layer) is epitaxially grown upon the surface of a first, underlaying crystalline layer, creating a heterojunction. Subsequently a third crystalline layer is deposited or grown upon the major exposed surface of the second, strained heteroepitaxial layer. The preferred manner of growth of the third crystalline layer is epitaxial growth. The composition of the third crystalline layer must be such that upon deposition or growth, the third layer substantially continuously binds to the heteroepitaxial structure of the second layer. Subsequent to growth of the at least three layer structure, the structure is processed at temperatures in excess of the growth temperature of the second heteroepitaxial layer. Presence of the third crystalline layer prevents the generation of a substantial amount of misfit dislocations between the first crystalline layer substrate and the second heteroepitaxial layer.

Fabricating a semiconductor device with strained Si.sub.1-x Ge.sub.x

Growing community of inventors

Palo Alto, CA, United States of America

James F Gibbons