The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 1986
Filed:
Aug. 13, 1984
Bantval J Baliga, Clifton Park, NY (US);
Victor A Temple, Clifton Park, NY (US);
Tat-Sing P Chow, Schenectady, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
Reduction in the forward current gain of an inherent bipolar transistor in an insulated-gate semiconductor device such as an IGT or an IGFET is achieved by implantation of selected ions into the semiconductor material of such device. The ions, which create defects in the implanted region constituting current carrier recombination centers, form a layer with a peak concentration situated in proximity to the emitter-base junction of the inherent bipolar transistor. The layer of ions is of small thickness, whereby the resulting increase in the respective sheet resistances of the emitter and base layers to either side of the emitter-base junction is minimized.