The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 1989
Filed:
Apr. 03, 1987
Bantval J Baliga, Schenectady, NY (US);
Tat-Sing P Chow, Schenectady, NY (US);
Hsueh-Rong Chang, Scotia, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
A power field effect device has a high voltage blocking junction which intersects the device surface under the gate electrode. That intersection is a closed plane geometric figure whose center is within the body region of the device rather than in the more heavily doped base region of the device. The figure preferably is everywhere convex and has a maximum width of substantially less than the depletion width, at breakdown, of a corresponding parallel plane junction. The device breakdown voltage is higher than the breakdown voltage of a corresponding junction having a cylindrical edge with a straight axis. In a preferred embodiment, the high voltage blocking junction has a plurality of such intersections with the device surface, each situated beneath a segment of the gate electrode. In a bipolar embodiment, the gate electrode may be omitted.