The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 1991
Filed:
Apr. 13, 1989
Charles S Korman, Schenectady, NY (US);
Krishna Shenai, Schenectady, NY (US);
Bantval J Baliga, Raleigh, NC (US);
Patricia A Piacente, Schenectady, NY (US);
Bernard Gorowitz, Clifton Park, NY (US);
Tat-Sing P Chow, Schenectady, NY (US);
Manjin J Kim, Ossining, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
A multi-cellular power field effect semiconductor device includes a high conductivity layer of metal or a metal silicide disposed in intimate contact with the source region of the device. This high conductivity layer is self-aligned with respect to the aperture in the gate electrode through which the source region is diffused. The presence of this high conductivity layer allows a substantially smaller contact window to be employed for making contact between the final metallization and the source region. As a consequence, the aperture in the gate electrode and the cell size of the device can both be substantially reduced. The device has substantially improved operating characteristics. A method of producing the device is also described.