Patricia A Piacente

Title: Patricia A. Piacente: Innovator in Power Field Effect Devices

Introduction

Patricia A. Piacente is a notable inventor based in Schenectady, NY (US). She has made significant contributions to the field of semiconductor technology, particularly in the development of power field effect devices. With a total of 4 patents to her name, her work has advanced the efficiency and performance of these devices.

Latest Patents

One of her latest patents focuses on power field effect devices having small cell size and low contact. This innovation involves a multi-cellular power field effect semiconductor device that includes a high conductivity layer of metal or a metal silicide. This layer is self-aligned with respect to the aperture in the gate electrode, allowing for a smaller contact window and improved operating characteristics. Another significant patent addresses power field effect devices with low gate sheet resistance. This device features a tungsten silicide/polysilicon/oxide gate electrode stack, which greatly reduces ohmic contact resistance, enhancing the device's performance.

Career Highlights

Patricia A. Piacente is currently employed at General Electric Company, where she continues to push the boundaries of semiconductor technology. Her work has been instrumental in developing devices that are not only more efficient but also more compact, which is crucial in today's technology-driven world.

Collaborations

Throughout her career, Patricia has collaborated with esteemed colleagues such as Charles S. Korman and Krishna Shenai. These collaborations have further enriched her research and development efforts, leading to innovative solutions in the semiconductor industry.

Conclusion

Patricia A. Piacente's contributions to the field of power field effect devices exemplify her dedication to innovation and excellence. Her patents reflect a commitment to advancing technology and improving device performance.