The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 1991
Filed:
Jun. 01, 1989
Krishna Shenai, Schenectady, NY (US);
Bantval J Baliga, Raleigh, NC (US);
Patricia A Piacente, Schenectady, NY (US);
Charles S Korman, Schenectady, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
A multi-cellular power field effect semiconductor device includes a tungsten silicide/polysilicon/oxide gate electrode stack with low sheet resistance. Preferably, a layer of tungsten is also disposed in intimate contact with the source region of the device. This tunsten layer is self-aligned with respect to the aperture in the gate electrode through which the source region is diffused. The presence of this tungsten layer greatly reduces the resulting ohmic contact resistance to the region. If desired, a tunsten layer can also be disposed in contact with the drain region of the device, again, to lower ohmic contact resistance. The device has substantially improved operating characteristics. Novel processes for producing the device are also described.