Nirasaki, Japan

Takuya Sugawara

This inventor holds 24 USPTO granted patents and 1 EPO patent, primarily in Semiconductor Fabrication. Top assignees: Tokyo Electron Limited, Leland Stanford Junior University, Elpida Memory, Inc.. Active years: 2001-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takuya Sugawara. Retrieved from https://idiyas.com/inventor/takuya-sugawara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 25.0


Average Co-Inventor Count = 4.0

ph-index = 5

Forward Citations = 93(Granted Patents)


Location History:

  • Palo Alto, CA (US) (2009)
  • Santa Clara, CA (US) (2010 - 2011)
  • Yamanashi, JP (2007 - 2013)
  • Nirasaki, JP (2001 - 2014)

Company Filing History:


Years Active: 2001-2014

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Areas of Expertise:
Film Forming Method
Semiconductor Device
Insulating Film
Plasma Processing
Titanium Nitride
Gate Dielectric
Nitriding Method
Fin-Type Field Effect Transistor
Substrate Treatment
Electronic Device Material
MOCVD Method
High-K Layer
24 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Takuya Sugawara

Introduction: Takuya Sugawara, an esteemed inventor based in Nirasaki, Japan, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 24 patents, Sugawara's work focuses primarily on advanced film forming methods that enhance the performance of electronic components.

Latest Patents: Among his latest innovations, Sugawara has developed several noteworthy patents. One such patent describes a film forming method and apparatus, which includes a process for forming a dielectric film, specifically a zirconium oxide film. This involves supplying a zirconium material, which encompasses a Zr compound featuring a cyclopentadienyl ring, alongside an oxidant, to create the film on a substrate. Followed by this, a titanium oxide film is formed using a titanium material that also contains a cyclopentadienyl ring structure.

Another significant patent presented by Sugawara is an alteration method and apparatus for titanium nitride. This method enhances the specific resistance of a titanium nitride film through exposure to plasma derived from noble gases or nitrogen, specifically avoiding the inclusion of oxygen. Such techniques illustrate Sugawara’s dedication to advancing semiconductor manufacturing processes.

Career Highlights: Takuya Sugawara's career has been marked by his tenure at notable institutions, such as Tokyo Electron Limited and Leland Stanford Junior University. His experience at these prestigious organizations has significantly contributed to his expertise in semiconductor research and development, enabling him to produce groundbreaking inventions in the industry.

Collaborations: Throughout his career, Sugawara has collaborated with prominent individuals, including Seiji Matsuyama and Masaru Sasaki. These partnerships have fostered an environment of innovation, leading to the development of cutting-edge technologies and enhancing the commercial viability of his inventions.

Conclusion: Takuya Sugawara stands out as a leading inventor in the semiconductor field, with a rich history of patents and collaborations that reflect his innovative spirit. As technology continues to evolve, Sugawara's contributions will undoubtedly play a crucial role in shaping the future of electronic components and materials.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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