The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2009
Filed:
Oct. 31, 2005
Takuya Sugawara, Palo Alto, CA (US);
Paul C. Mcintyre, Sunnyvale, CA (US);
Takuya Sugawara, Palo Alto, CA (US);
Paul C. McIntyre, Sunnyvale, CA (US);
Tokyo Electron Limited, Tokyo, JP;
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Abstract
A method and system for forming a nitrided germanium-containing layer by plasma processing. The method includes providing a germanium-containing substrate in a process chamber, generating a plasma from a process gas containing Nand a noble gas, where the plasma conditions are selected effective to form plasma excited Nspecies while controlling formation of plasma excited N species, and exposing the substrate to the plasma to form a nitrided germanium-containing layer on the substrate. A method is also provided that includes exposing a germanium-containing dielectric layer to liquid or gaseous HO to alter the thickness and chemical composition of the layer.