The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Jan. 11, 2008
Hajime Nakabayashi, Yamanashi, JP;
Takuya Sugawara, Yamanashi, JP;
Takashi Kobayashi, Hyogo, JP;
Junichi Kitagawa, Hyogo, JP;
Yoshitsugu Tanaka, Yamanashi, JP;
Hajime Nakabayashi, Yamanashi, JP;
Takuya Sugawara, Yamanashi, JP;
Takashi Kobayashi, Hyogo, JP;
Junichi Kitagawa, Hyogo, JP;
Yoshitsugu Tanaka, Yamanashi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method for manufacturing a fin-type field effect transistor simply and securely by using a SOI (Silicon On Insulator) wafer, capable of suppressing an undercut formation, is disclosed. The method includes forming a fin-shaped protrusion by selectively dry-etching a single crystalline silicon layer until an underlying buried oxide layer is exposed; forming a sacrificial oxide film by oxidizing a surface of the protrusion including a damage inflicted thereon; and forming a fin having a clean surface by removing the sacrificial oxide film by etching, wherein an etching rate rof the sacrificial oxide film is higher than an etching rate rof the buried oxide layer during the etching.