Tokyo Electron Limited

Leland Stanford Junior University

Texas Instruments Corporation

Elpida Memory, Inc.

Takuya Sugawara

Seiji Matsuyama

Masaru Sasaki

Toshio Nakanishi

Shigenori Ozaki

Yoshihide Tada

Genji Nakamura

Kazuhide Hasebe

Shigeru Nakajima

Tomonori Fujiwara

Yuichiro Morozumi

Katsushige Harada

Paul C McIntyre

Shigemi Murakawa

Yoshihiro Ishida

Hiroaki Niimi

Luigi Colombo

Yoshihiro Sato

Yoshitaka Tsunashima

Toshiyuki Hirota

Tatsuo Matsudo

Junichi Kitagawa

Seiji Inumiya

Shingo Hishiya

Koji Akiyama

Takashi Kobayashi

Takakazu Kiyomura

Hajime Nakabayashi

Yoshitsugu Tanaka

Dong-Kyun Choi

Masaru Sasakii

Koji Shimomura

A method of forming a dielectric film including a zirconium oxide film includes: forming a zirconium oxide film on a substrate to be processed by supplying a zirconium material and an oxidant, the zirconium material including a Zr compound which includes a cyclopentadienyl ring in a structure, and forming a titanium oxide film on the zirconium oxide film by supplying a titanium material and an oxidant, the titanium material including a Ti compound which includes a cyclopentadienyl ring in a structure.

Film forming method, film forming apparatus, and storage medium

An alteration method of a titanium nitride film, comprising exposing a titanium nitride film formed on a semiconductor substrate to plasma obtained by exciting a process gas that includes noble gas or nitrogen and excludes oxygen, thereby increasing a specific resistance of the titanium nitride film.

Alteration method and alteration apparatus for titanium nitride

The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrOfilm on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiOfilm on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrOfilm forming sequences and the SiOfilm forming sequences are repeated for the adjusted number of times of performances.

Film forming apparatus

An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.

Method of modifying insulating film

Film forming method and film forming apparatus

A method for manufacturing a fin-type field effect transistor simply and securely by using a SOI (Silicon On Insulator) wafer, capable of suppressing an undercut formation, is disclosed. The method includes forming a fin-shaped protrusion by selectively dry-etching a single crystalline silicon layer until an underlying buried oxide layer is exposed; forming a sacrificial oxide film by oxidizing a surface of the protrusion including a damage inflicted thereon; and forming a fin having a clean surface by removing the sacrificial oxide film by etching, wherein an etching rate rof the sacrificial oxide film is higher than an etching rate rof the buried oxide layer during the etching.

Manufacturing method of fin-type field effect transistor

A method for hydrogen sintering a substrate including a semiconductor device formed thereon comprises the steps of exciting a processing gas comprising a noble gas and a hydrogen gas to form a plasma comprising hydrogen radicals and hydrogen ions, and exposing the substrate to the plasma. A preferred method comprises forming a gate insulation film on a substrate, forming a polysilicon electrode on the gate insulation film, and exposing the polysilicon electrode to an atmosphere comprising hydrogen radicals and hydrogen ions.

Substrate treating method and production method for semiconductor device

In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.

Method for forming insulation film

The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the electronic device substrate. A good underlying film is provided at the interface between the insulating film and the electronic device substrate, so that the thus formed underlying film can improve the property of the insulating film.

Method for forming underlying insulation film

An electronic device material comprising at least an electronic device substrate and a silicon oxynitride film disposed on the substrate is provided. The silicon oxynitride film is characterized by containing nitrogen atoms in a large amount in the vicinity of the oxynitride film surface when the nitrogen content distribution in the thickness direction of the silicon oxynitride film is examined by SIMS (secondary ion mass spectrometry) analysis. By virtue of this constitution, an electronic device material comprising an oxynitride film having an excellent effect of preventing penetration of boron and having excellent gate leak properties can be obtained.

Material for electronic device and process for producing the same

A method and system for forming a nitrided germanium-containing layer by plasma processing. The method includes providing a germanium-containing substrate in a process chamber, generating a plasma from a process gas containing Nand a noble gas, where the plasma conditions are selected effective to form plasma excited Nspecies while controlling formation of plasma excited N species, and exposing the substrate to the plasma to form a nitrided germanium-containing layer on the substrate. A method is also provided that includes exposing a germanium-containing dielectric layer to liquid or gaseous HO to alter the thickness and chemical composition of the layer.

Method and system for forming a nitrided germanium-containing layer using plasma processing

Method for forming a nitrided germanium-containing layer using plasma processing

A substrate processing method includes the step of forming an oxide film by oxidizing a silicon substrate surface and the step of nitriding the oxide film to form an oxynitride film, wherein there is provided a step of purging oxygen after the oxidizing step but before said nitriding step from an ambient in which said nitriding processing is conducted.

Substrate treating method

Growing community of inventors

Nirasaki, Japan

Takuya Sugawara