Ibaraki, Japan

Takeo Okabe

This inventor holds 30 USPTO granted patents and 5 published patent applications and 7 EPO patents, primarily in Sputtering Targets. Top assignees: Jx Nippon Mining Metals Corporation, Nippon Mining & Metals Co., Ltd., Nikko Materials Company, Limited. Active years: 2004-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takeo Okabe. Retrieved from https://idiyas.com/inventor/takeo-okabe

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 30 

% Patents Active = 80.0

 

Average Co-Inventor Count = 2.5

ph-index = 6

Forward Citations = 135(Granted Patents)


Company Filing History:


Years Active: 2004-2026

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Areas of Expertise:
Sputtering Target
Copper Alloy
Hafnium Alloy
Electrolytic Plating
Semiconductor Wiring
Tungsten Silicide
High-Purity Copper
Manufacturing Method
Copper Electroplating
Tantalum Target
Process for Producing
Film Formation
30 patents (USPTO):Explore Patents

Title: **Takeo Okabe: A Pioneer in Semiconductor Materials**

Introduction

Takeo Okabe is an acclaimed inventor based in Ibaraki, Japan, known for his significant contributions to the field of semiconductor materials. With an impressive portfolio of 28 patents, he has made notable advancements that enhance the performance and efficiency of semiconductor components.

Latest Patents

Among his latest innovations are the copper alloy sputtering targets aimed at improving wiring materials for semiconductor elements. The first copper alloy sputtering target contains 0.5 to 4.0 wt % of aluminum and less than 0.5 wtppm of silicon. Similarly, the second target comprises 0.5 to 4.0 wt % of tin and less than 0.5 wtppm of manganese. These targets can further include selected elements such as antimony, zirconium, titanium, chromium, silver, gold, cadmium, indium, and arsenic, in a total amount of 1.0 wtppm or less. These innovations ensure stable and uniform seed layers during electrolytic copper plating while exhibiting excellent film formation characteristics.

Another notable patent is for a tungsten sintered compact sputtering target. This innovation features tungsten with a purity of 5N (99.999%) or more and a carbon impurity content of 5 wtppm or less. The objective of this development is to reduce the specific resistance of tungsten films deposited from this target, enhancing the overall effectiveness of semiconductor applications.

Career Highlights

Takeo Okabe has worked with leading companies in the semiconductor industry, including JX Nippon Mining & Metals Corporation and Nippon Mining & Metals Co., Ltd. His work at these organizations has enabled large-scale advancements in material usage for electronic components.

Collaborations

Throughout his career, Okabe has collaborated with several prominent figures in the industry, including Hirohito Miyashita and Akihiro Aiba. These teamwork efforts have yielded significant breakthroughs in sputtering technology, contributing to the improvement of semiconductor devices.

Conclusion

Takeo Okabe’s dedication to innovation in semiconductor materials is evident through his 28 patents and impactful collaborations. His work continues to influence the field and drives forward advancements that enhance the reliability and efficiency of modern electronic components.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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