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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12404580 B1

PDFFull Text
Date of Patent:
Sep. 02, 2025

Filed:

Nov. 21, 2018

Tungsten silicide target member and method for manufacturing same, and method for manufacturing tungsten silicide film

Applicant:

Jx Nippon Mining & Metals Corporation, Tokyo, JP;

Inventors:

Takafumi Dasai, Ibaraki, JP;

Takayuki Asano, Ibaraki, JP;

Takeo Okabe, Ibaraki, JP;

Assignee:

JX Advanced Metals Corporation, Tokyo, JP;

Attorney:

Nields, Lemack & Frame, LLC

Primary Examiner:

Michael A Band

Int. Cl.
CPC ...
C23C 14/34 (2006.01); B22F 1/05 (2022.01); B22F 3/15 (2006.01); C01B 33/06 (2006.01); C23C 14/06 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); B22F 1/05 (2022.01); B22F 3/15 (2013.01); C01B 33/06 (2013.01); C23C 14/0682 (2013.01); H01J 37/3429 (2013.01); H01J 37/3491 (2013.01); B22F 2301/20 (2013.01); B22F 2302/45 (2013.01); B22F 2304/10 (2013.01); C23C 14/34 (2013.01);
Abstract

Provided is a tungsten silicide target that efficiently suppresses generation of particles during sputtering deposition. A tungsten silicide target having a two-phase structure of a WSiphase and a Si phase, wherein the tungsten silicide target is represented by a composition formula in an atomic ratio: WSiwith X>2.0; wherein, when observing a sputtering surface, a ratio of a total area I1 of Si grains having an area per a Si grain of 63.6 μmor more to a total area S1 of the Si grains forming the Si phase (I1/S1) is 5% or less; and wherein a Weibull modulus of flexural strength is 2.1 or more.

Find Patent Forward Citations

Dasai, Takafumi. (2025). Tungsten silicide target member and method for manufacturing same, and method for manufacturing tungsten silicide film (U.S. Patent No. 12404580). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12404580

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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