The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Nov. 21, 2018
Applicant:
Jx Nippon Mining & Metals Corporation, Tokyo, JP;
Inventors:
Assignee:
JX Advanced Metals Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); B22F 1/05 (2022.01); B22F 3/15 (2006.01); C01B 33/06 (2006.01); C23C 14/06 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); B22F 1/05 (2022.01); B22F 3/15 (2013.01); C01B 33/06 (2013.01); C23C 14/0682 (2013.01); H01J 37/3429 (2013.01); H01J 37/3491 (2013.01); B22F 2301/20 (2013.01); B22F 2302/45 (2013.01); B22F 2304/10 (2013.01); C23C 14/34 (2013.01);
Abstract
Provided is a tungsten silicide target that efficiently suppresses generation of particles during sputtering deposition. A tungsten silicide target having a two-phase structure of a WSiphase and a Si phase, wherein the tungsten silicide target is represented by a composition formula in an atomic ratio: WSiwith X>2.0; wherein, when observing a sputtering surface, a ratio of a total area I1 of Si grains having an area per a Si grain of 63.6 μmor more to a total area S1 of the Si grains forming the Si phase (I1/S1) is 5% or less; and wherein a Weibull modulus of flexural strength is 2.1 or more.