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For the Inventor, By the Inventor

Tokyo, Japan

Jx Advanced Metals Corporation


USPTO Granted Patents = 36



Trademarks = 3

Forward Citations = 0

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87 inventors (with patents filed for the assignee):

goldMedal Shuhei Murata (4 out of 9 patents)

silverMedal Katsushi Aoki (4 out of 13 patents)

bronzeMedal Yukito Yamamoto (4 out of 4 patents)

4.  Koichi Takemoto (3 out of 8 patents)

5.  Toru Imori (3 out of 4 patents)

6.  Ryo Suzuki (2 out of 134 patents)

7.  Akira Miura (2 out of 11 patents)

8.  Makoto Mikami (2 out of 6 patents)

9.  Yoshiki Yamazaki (2 out of 5 patents)

10.  Takeo Okabe (2 out of 30 patents)

11.  Tsubasa Takeda (2 out of 5 patents)

12.  Yasuyuki Iwabuchi (2 out of 6 patents)

13.  Daiki Shono (2 out of 2 patents)

14.  Hideaki Hayashi (2 out of 2 patents)

15.  Hiroshi Takamura (1 out of 15 patents)


Core Competencies:
Electromagnetic Shielding
Sputtering Target
Indium Phosphide
Copper Powder
Metal-Resin Composite
Solid Electrolyte
MgSi Single Crystal
Processing Method
Ceramic Materials
Thin Film
Copper Electrode
Waste Processing

36 patents:

1. 12745380 - Electromagnetic wave shielding material, covering material or exterior material, and electric/electronic apparatus (2026-09-22),
2. 12740431 - Indium phosphide substrate and method for producing indium phosphide substrate (2026-09-15),
3. 12715026 - Processing method for electronic/electric device component waste (2026-08-25),
4. 12700526 - Laminate and method for manufacturing the same (2026-08-04),
5. 12660140 - Metal-resin composite electromagnetic shielding material (2026-06-16),
6. 12630917 - Sputtering target and method for producing same (2026-05-19),
7. 12629753 - Copper powder, and method for manufacturing copper powder (2026-05-19),
8. 12612677 - Equipment and method for leaching copper, and method for producing electrolytic copper using said equipment and method (2026-04-28),
9. 12448704 - MgSi single crystal, MgSi single crystal substrate, infrared light receiving element and method for producing MgSi single crystal (2025-10-21),
10. 12438185 - Sulfide-based solid electrolyte and all-solid lithium ion battery (2025-10-07),
11. 12404580 - Tungsten silicide target member and method for manufacturing same, and method for manufacturing tungsten silicide film (2025-09-02),
12. 12312674 - Sputtering target (2025-05-27),
13. 12312655 - Method for processing electronic and electrical device component scrap (2025-05-27),
14. 12303916 - Peptide and method for using same (2025-05-20),
15. 12297121 - Stannous oxide powder and method for producing same (2025-05-13),
Jx Advanced Metals Corporation, based in Tokyo, specializes in the development and manufacturing of advanced metal materials and solutions. The company focuses on innovative technologies that enhance the performance and sustainability of various industries, including automotive, electronics, and energy. With a commitment to research and development, Jx Advanced Metals aims to lead in the field of advanced materials, contributing to technological advancements and environmental stewardship on a global scale.
Profile summary based on public USPTO records.

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USPTO Data Jan 1 1976 - Sep 29 2026

36 Patents

#985 in Tokyo

#2,098 in Japan

#18,697 in the World

Tokyo, JP
Tokyo, Japan

Jx Advanced Metals Corporation

Forward Citations = 0

87 inventors:

goldMedal Shuhei Murata (4 out of 9 patents)

silverMedal Katsushi Aoki (4 out of 13 patents)

bronzeMedal Yukito Yamamoto (4 out of 4 patents)

4.  Koichi Takemoto (3 out of 8 patents)

5.  Toru Imori (3 out of 4 patents)

Please report any incorrect information to [email protected]
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