The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Oct. 07, 2021
Applicant:
Jx Advanced Metals Corporation, Tokyo, JP;
Inventors:
Assignee:
JX ADVANCED METALS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 29/40 (2006.01); C30B 25/18 (2006.01); H10D 62/85 (2025.01); H10P 14/20 (2026.01); H10P 90/00 (2026.01);
U.S. Cl.
CPC ...
C30B 29/40 (2013.01); C30B 25/186 (2013.01); H10D 62/85 (2025.01); H10P 14/2909 (2026.01); H10P 90/126 (2026.01); H10P 90/128 (2026.01); H10P 90/129 (2026.01);
Abstract
Provided is an indium phosphide substrate, a method for manufacturing indium phosphide substrate, and a semiconductor epitaxial wafer capable of suppressing an occurrence of contamination of the surface of the indium phosphide substrate caused by residues at the edge part. An indium phosphide substrate, wherein a surface roughness of an edge part of the substrate has a root mean square height Sq of 0.15 μm or less, as measured by a laser microscopy on the entire surface of the edge part.