This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Jx Advanced Metals Corporation. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Kodai Yamagishi: Semiconductor Materials Inventor
Introduction
Kodai Yamagishi is an inventor based in Kitaibaraki, Japan. His patent work concerns indium phosphide substrates, a material used in semiconductor technologies.
Latest Patents
Yamagishi is associated with 1 patent: “Indium Phosphide Substrate, Method for Manufacturing Indium Phosphide Substrate, and Semiconductor Epitaxial Wafer.” The invention describes a substrate with an edge-part surface roughness of no more than 0.15 μm root mean square height (Sq), measured across the entire edge surface using laser microscopy. The approach is intended to reduce contamination of the substrate surface caused by residues at its edge.
Career Highlights
Yamagishi is associated with JX Advanced Metals Corporation. His patent reflects work on substrate manufacturing and surface quality for semiconductor materials.
Collaborations
Kenji Suzuki and Shunsuke Oka are identified as Yamagishi’s coworkers.
Conclusion
Kodai Yamagishi’s patent focuses on controlling edge roughness in indium phosphide substrates to help prevent residue-related contamination and support semiconductor wafer manufacturing.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile