The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Sep. 06, 2012
Kenichi Nagata, Ibaraki, JP;
Tomio Otsuki, Ibaraki, JP;
Takeo Okabe, Ibaraki, JP;
Nobuhito Makino, Ibaraki, JP;
Atsushi Fukushima, Ibaraki, JP;
Kenichi Nagata, Ibaraki, JP;
Tomio Otsuki, Ibaraki, JP;
Takeo Okabe, Ibaraki, JP;
Nobuhito Makino, Ibaraki, JP;
Atsushi Fukushima, Ibaraki, JP;
JX Nippon Mining & Metals Corporation, Tokyo, JP;
Abstract
Provided is a high-purity copper-manganese-alloy sputtering target comprising 0.05 to 20 wt % of Mn and the remainder being Cu and inevitable impurities. The high-purity copper-manganese-alloy sputtering target is characterized in that the in-plane variation (CV value) in Mn concentration of the target is 3% or less. It is thus possible to form a thin film having excellent uniformity by adding an appropriate amount of a Mn element to copper and reducing the in-plane variation of the sputtering target. In particular, there is provided a high-purity copper-manganese-alloy sputtering target which is useful for improving the yield and the reliability of semiconductor products which are making progress in a degree of refinement and integration.