Ibaraki, Japan

Atsushi Fukushima

This inventor holds 13 USPTO granted patents and 5 published patent applications and 8 EPO patents. Top assignee: Jx Nippon Mining Metals Corporation. Active years: 2012-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Atsushi Fukushima. Retrieved from https://idiyas.com/inventor/atsushi-fukushima

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 13 

% Patents Active = 100.0

 

Average Co-Inventor Count = 2.7

ph-index = 4

Forward Citations = 38(Granted Patents)


Company Filing History:


Years Active: 2012-2019

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13 patents (USPTO):Explore Patents

Title: **Atsushi Fukushima: Innovator in Sputtering Target Technology**

Introduction

Atsushi Fukushima, an accomplished inventor based in Ibaraki, Japan, has made significant contributions to the field of semiconductor manufacturing. With a total of 13 patents to his name, Fukushima's work primarily focuses on the development of high-purity sputtering targets, which are essential for creating uniform thin films in semiconductor products.

Latest Patents

Two of Atsushi Fukushima's latest patents exemplify his innovative spirit:

1. **High-Purity Copper-Chromium Alloy Sputtering Target**

This invention involves a high-purity copper-chromium alloy sputtering target containing 0.1 to 10 wt % chromium (Cr), with copper (Cu) making up the remainder. The target is designed to minimize variation in the number of precipitated Cr grains across different areas, ensuring a thin film with outstanding uniformity. This achievement is crucial for enhancing the yield and reliability of semiconductor products, especially as the industry evolves toward miniaturization and integration.

2. **Tantalum Sputtering Target**

This patent describes a tantalum sputtering target that contains between 1 mass ppm and 100 mass ppm of niobium as an essential component, boasting a purity of 99.999% or more, excluding niobium and gas components. The resulting high-purity tantalum sputtering target features a uniform and fine structure, leading to stable plasma generation and superior film evenness.

Career Highlights

Atsushi Fukushima is affiliated with JX Nippon Mining & Metals Corporation, where he has been instrumental in advancing materials technology. His expertise in sputtering targets has positioned him as a key figure in enhancing the performance of semiconductor components.

Collaborations

Throughout his career, Fukushima has collaborated with esteemed colleagues such as Kunihiro Oda and Tomio Otsuki. These partnerships have facilitated the exchange of ideas and innovation, furthering the development of cutting-edge technologies in the semiconductor industry.

Conclusion

Atsushi Fukushima's inventive prowess in sputtering target technology significantly contributes to the semiconductor manufacturing sector. His focus on high-purity materials not only enhances product reliability but also supports the industry's ongoing push for miniaturization and integration. Through his patents, Fukushima continues to pave the way for advancements in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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