The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2017
Filed:
Aug. 04, 2010
Atsushi Fukushima, Ibaraki, JP;
Kunihiro Oda, Ibaraki, JP;
Shinichiro Senda, Ibaraki, JP;
JX Nippon Mining & Metals Corporation, Tokyo, JP;
Abstract
Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of tungsten as an essential component, and having a purity of 99.998% or more excluding tungsten and gas components. Additionally provided is a tantalum sputtering target according to according to the above further containing 0 to 100 mass ppm of molybdenum and/or niobium, excluding 0 mass ppm thereof, wherein the total content of tungsten, molybdenum, and niobium is 1 mass ppm or more and 150 mass ppm or less, and wherein the purity is 99.998% or more excluding tungsten, molybdenum, niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which enables stable plasma and yields superior film evenness (uniformity).