The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Jul. 21, 2011
Applicants:
Shinichiro Senda, Ibaraki, JP;
Atsushi Fukushima, Ibaraki, JP;
Inventors:
Shinichiro Senda, Ibaraki, JP;
Atsushi Fukushima, Ibaraki, JP;
Assignee:
JX Nippon Mining & Metals Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); C22C 1/02 (2006.01); C22C 27/02 (2006.01); C22F 1/18 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3407 (2013.01); C22C 1/02 (2013.01); C22C 27/02 (2013.01); C22F 1/18 (2013.01); C23C 14/3414 (2013.01);
Abstract
Provided is a tantalum sputtering target, in which 1 mass ppm or more and 50 mass ppm or less of boron is contained as an essential component, and of which the purity excluding boron and gas components is 99.998% or higher. Thereby obtained is a high-purity tantalum sputtering target having a uniform and fine structure and enabling plasma stabilization and achievement of superior film evenness (uniformity).