The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Apr. 23, 2010
Applicants:
Atsushi Fukushima, Ibaraki, JP;
Kunihiro Oda, Ibaraki, JP;
Inventors:
Atsushi Fukushima, Ibaraki, JP;
Kunihiro Oda, Ibaraki, JP;
Assignee:
JX Nippon Mining & Metals Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C22C 27/00 (2006.01); C22C 27/02 (2006.01); C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
C22C 27/00 (2013.01); C22C 27/02 (2013.01); C23C 14/3414 (2013.01);
Abstract
Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of niobium as an essential component, and having a purity of 99.999% or more excluding niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which yields stable plasma and superior film evenness (uniformity).