The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2017

Filed:

Sep. 12, 2012
Applicants:

Kenichi Nagata, Ibaraki, JP;

Tomio Otsuki, Ibaraki, JP;

Takeo Okabe, Ibaraki, JP;

Nobuhito Makino, Ibaraki, JP;

Atsushi Fukushima, Ibaraki, JP;

Inventors:

Kenichi Nagata, Ibaraki, JP;

Tomio Otsuki, Ibaraki, JP;

Takeo Okabe, Ibaraki, JP;

Nobuhito Makino, Ibaraki, JP;

Atsushi Fukushima, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/35 (2006.01); H01J 37/34 (2006.01); C22C 9/05 (2006.01); C23C 14/34 (2006.01); B21D 53/00 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3435 (2013.01); B21D 53/00 (2013.01); C22C 9/05 (2013.01); C23C 14/3407 (2013.01); C23C 14/3414 (2013.01); H01J 37/3414 (2013.01); H01J 37/3426 (2013.01);
Abstract

A backing plate integrated sputtering target includes a flange part having a Vicker's hardness (Hv) of 90 or more and a 0.2% yield stress of 6.98×10N/mor more. Enhancing the mechanical strength of only the flange part of the target inhibits the target from being deformed during sputtering, and further, does not vary the original sputtering characteristics. Consequently, the target can form a thin film having excellent uniformity. This can improve the yield and the reliability of semiconductor products, which have been progressing in miniaturization and integration.


Find Patent Forward Citations

Loading…