The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2016

Filed:

Jul. 18, 2013
Applicant:

Jx Nippon Mining & Metals Corporation, Tokyo, JP;

Inventors:

Yuichiro Shindo, Ibaraki, JP;

Susumu Shimamoto, Ibaraki, JP;

Atsushi Fukushima, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25C 1/12 (2006.01); C22C 9/00 (2006.01); C23C 14/34 (2006.01); C25C 7/06 (2006.01);
U.S. Cl.
CPC ...
C25C 1/12 (2013.01); C22C 9/00 (2013.01); C23C 14/3414 (2013.01); C25C 7/06 (2013.01); H01L 2924/0002 (2013.01);
Abstract

High purity copper having a purity of 6N or higher, wherein content of each of the respective components of P, S, 0, and C is 1 ppm or less, and nonmetal inclusions having a particle size of 0.5 μm or more and 20 μm or less contained in the copper are 10,000 inclusions/g or less. As a result of using high purity copper or high purity copper alloy as the raw material from which harmful P, S, C, O-based inclusions have been reduced and controlling the existence form of nonmetal inclusions, it is possible to reduce the occurrence of rupture of a bonding wire and improve the reproducibility of mechanical properties, or reduce the percent defect of a semiconductor device wiring formed by sputtering a high purity copper target with favorable reproducibility.


Find Patent Forward Citations

Loading…