The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Feb. 27, 2013
Applicant:
Jx Nippon Mining & Metals Corporation, Tokyo, JP;
Inventors:
Kazumasa Ohashi, Ibaraki, JP;
Takeo Okabe, Ibaraki, JP;
Assignee:
JX Nippon Mining & Metals Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C22C 27/04 (2006.01); C22C 1/04 (2006.01); C23C 14/14 (2006.01); B22F 3/14 (2006.01); H01J 37/34 (2006.01); C23C 14/34 (2006.01); C23C 14/16 (2006.01); B22F 7/00 (2006.01); B22F 7/04 (2006.01); B22F 3/15 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); B22F 3/14 (2013.01); B22F 7/008 (2013.01); B22F 7/04 (2013.01); C22C 1/045 (2013.01); C22C 27/04 (2013.01); C23C 14/14 (2013.01); C23C 14/165 (2013.01); H01J 37/3426 (2013.01); B22F 3/15 (2013.01);
Abstract
Provided is a tungsten sintered compact sputtering target, wherein the purity of the tungsten is 5N (99.999%) or more, and the content of impurity carbon in the tungsten is 5 wtppm or less. An object of the present invention is to decrease the specific resistance of a tungsten film sputter-deposited by using a tungsten sintered compact sputtering target by reducing a carbon content in the tungsten target.