Ibaraki, Japan

Kazumasa Ohashi

USPTO Granted Patents = 6 

Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2016-2019

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6 patents (USPTO):Explore Patents

Title: Kazumasa Ohashi: Innovator in Sputtering Technology

Introduction

Kazumasa Ohashi is a prominent inventor based in Ibaraki, Japan. He has made significant contributions to the field of sputtering technology, holding a total of six patents. His work focuses on the development of advanced materials for semiconductor applications.

Latest Patents

Ohashi's latest patents include a sputtering target comprising Ni—P alloy or Ni—Pt—P alloy and a production method for the same. This method involves melting and atomizing a Ni—P alloy with a phosphorus content of 15 to 21 wt %, resulting in a fine atomized powder. The process aims to achieve a small deviation from the intended composition, enhancing the quality of the sputtering target. Another notable patent is for a tungsten sputtering target that contains 0.01 to 0.5 wt % of silver, designed to produce films with low specific resistance and excellent uniformity, particularly for semiconductor devices.

Career Highlights

Kazumasa Ohashi is currently employed at JX Nippon Mining & Metals Corporation, where he continues to innovate in the field of materials science. His expertise in sputtering technology has positioned him as a key figure in the development of high-performance materials.

Collaborations

Ohashi has collaborated with notable colleagues, including Takeo Okabe and Kunihiro Oda, contributing to various projects that enhance the capabilities of sputtering technology.

Conclusion

Kazumasa Ohashi's contributions to sputtering technology and his innovative patents underscore his importance in the field. His work continues to influence advancements in semiconductor manufacturing and materials science.

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